DRDNB16W-7
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN/DIODE SOT363
$0.39
Available to order
Reference Price (USD)
3,000+
$0.11595
6,000+
$0.10965
15,000+
$0.10335
30,000+
$0.09600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated's DRDNB16W-7 redefines reliability in the Transistors - Bipolar (BJT) - Single, Pre-Biased category. With built-in bias resistors, this component accelerates prototyping while maintaining signal integrity. Key features include 1) 300mA collector current capacity 2) Wide operating temperature range (-55 C to +150 C) 3) RoHS compliance. Implement in motor control systems, sensor interfaces, or battery-powered devices for optimal results.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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