DTA143ECAT116
Rohm Semiconductor
Rohm Semiconductor
PNP -100MA -50V DIGITAL TRANSIST
$0.28
Available to order
Reference Price (USD)
3,000+
$0.03795
6,000+
$0.03300
15,000+
$0.02805
30,000+
$0.02640
75,000+
$0.02475
150,000+
$0.02310
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DTA143ECAT116 from Rohm Semiconductor is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Rohm Semiconductor's expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SST3
Related Products
Rohm Semiconductor
DTB113ECT116
Rohm Semiconductor
DTD743XETL
Rohm Semiconductor
DTC123JCAHZGT116
NXP USA Inc.
PDTB143EUF
Toshiba Semiconductor and Storage
RN1404,LXHF
Nexperia USA Inc.
PDTC123JT,235
onsemi
DTA144EET1
Rohm Semiconductor
DTD123YCHZGT116
Toshiba Semiconductor and Storage
RN2306,LXHF
onsemi