DTC114YU3HZGT106
Rohm Semiconductor
Rohm Semiconductor
DTC114YU3HZG IS AN DIGITAL TRANS
$0.39
Available to order
Reference Price (USD)
3,000+
$0.05520
6,000+
$0.04800
15,000+
$0.04080
30,000+
$0.03840
75,000+
$0.03600
150,000+
$0.03360
Exquisite packaging
Discount
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For designers seeking plug-and-play transistor solutions, DTC114YU3HZGT106 offers unmatched convenience. Rohm Semiconductor's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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