DXTN5840CFDB-7
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR U-DFN2020-
$0.20
Available to order
Reference Price (USD)
1+
$0.19519
500+
$0.1932381
1000+
$0.1912862
1500+
$0.1893343
2000+
$0.1873824
2500+
$0.1854305
Exquisite packaging
Discount
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The DXTN5840CFDB-7 from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the DXTN5840CFDB-7 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of DXTN5840CFDB-7 and enhance your electronic projects with this top-quality component from Diodes Incorporated.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 30mA, 3A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Power - Max: 690 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-3 (Type B)
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