DXTP58100CFDB-7
Diodes Incorporated
Diodes Incorporated
TRANS PNP 100V 2A 3DFN
$0.44
Available to order
Reference Price (USD)
1+
$0.44000
500+
$0.4356
1000+
$0.4312
1500+
$0.4268
2000+
$0.4224
2500+
$0.418
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the DXTP58100CFDB-7 Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the DXTP58100CFDB-7 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 185mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
- Power - Max: 690 mW
- Frequency - Transition: 135MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-3
Related Products
onsemi
2SC2812-6-M-TB-E
Microchip Technology
JANTXV2N3499UB
Microchip Technology
2N5625
Microchip Technology
JAN2N5154U3
Microchip Technology
2N3013
Microchip Technology
JANTX2N3634
Microchip Technology
JANTX2N6308
Nexperia USA Inc.
BC856BQBZ
onsemi
2SD2261-TD-E
Microchip Technology