EL7156CSZ
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HI/LOW SIDE 8SOIC
$7.32
Available to order
Reference Price (USD)
1+
$7.32000
500+
$7.2468
1000+
$7.1736
1500+
$7.1004
2000+
$7.0272
2500+
$6.954
Exquisite packaging
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Renesas Electronics America Inc presents the EL7156CSZ as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 4.5V ~ 16.5V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 3.5A, 3.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14.5ns, 15ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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