IXDD609SIATR
IXYS Integrated Circuits Division
IXYS Integrated Circuits Division
IC GATE DRVR LOW-SIDE 8SOIC
$2.13
Available to order
Reference Price (USD)
2,000+
$0.75600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS Integrated Circuits Division presents the IXDD609SIATR as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 35V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 22ns, 15ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Microchip Technology
TC4627EOE713
Texas Instruments
UCC27519DBVR
Analog Devices Inc.
LTC4444HMS8E#PBF
Microchip Technology
TC4426EUA
Power Integrations
2SC0106T2A1-12
Infineon Technologies
IRS26072DSTRPBF
Harris Corporation
ICL7667MTV
IXYS Integrated Circuits Division
IXDN609SIA
Renesas Electronics America Inc
HIP4086APZ
Texas Instruments