EPC2016C
EPC
EPC
GANFET N-CH 100V 18A DIE
$2.56
Available to order
Reference Price (USD)
2,500+
$1.05000
Exquisite packaging
Discount
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Enhance your electronic projects with the EPC2016C single MOSFET from EPC. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust EPC's EPC2016C for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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