EPC2052
EPC
EPC
GANFET N-CH 100V 8.2A DIE
$1.65
Available to order
Reference Price (USD)
2,500+
$0.68600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2052 from EPC sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to EPC's EPC2052 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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