TK6R9P08QM,RQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS10 DPAK 80V 6.9MOHM
$1.09
Available to order
Reference Price (USD)
1+
$1.09000
500+
$1.0791
1000+
$1.0682
1500+
$1.0573
2000+
$1.0464
2500+
$1.0355
Exquisite packaging
Discount
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Meet the TK6R9P08QM,RQ by Toshiba Semiconductor and Storage, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TK6R9P08QM,RQ stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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