EPC2103
EPC
EPC
GAN TRANS SYMMETRICAL HALF BRIDG
$9.16
Available to order
Reference Price (USD)
500+
$4.80500
1,000+
$4.34000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2103 from EPC is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the EPC2103 provides reliable performance in demanding environments. Choose EPC for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 28A
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
Diodes Incorporated
DMG1016UDW-7
Taiwan Semiconductor Corporation
TSM250N02DCQ RFG
Nexperia USA Inc.
BUK9K35-60RAX
Rectron USA
RM4077S8
Advanced Linear Devices Inc.
ALD110800SCL
Texas Instruments
CSD87384MT
Diodes Incorporated
ZXMHC6A07N8TC
Diodes Incorporated
DMC2020USD-13
Microchip Technology
APTC80TA15PG
Advanced Linear Devices Inc.