EPC2106ENGRT
EPC
EPC
GAN TRANS 2N-CH 100V BUMPED DIE
$0.00
Available to order
Reference Price (USD)
2,500+
$0.78400
Exquisite packaging
Discount
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The EPC2106ENGRT by EPC is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the EPC2106ENGRT offers superior functionality and longevity. Trust EPC to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A
- Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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