EPC2107
EPC
EPC
GANFET 3 N-CH 100V 9BGA
$2.01
Available to order
Reference Price (USD)
2,500+
$0.86800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the EPC2107 from EPC for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the EPC2107 stands out for its reliability and efficiency. EPC's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
- Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-VFBGA
- Supplier Device Package: 9-BGA (1.35x1.35)
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