EPC2108
EPC
EPC
GANFET 3 N-CH 60V/100V 9BGA
$1.91
Available to order
Reference Price (USD)
2,500+
$0.82600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the EPC2108 from EPC, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the EPC2108 provides the reliability and efficiency you need. EPC's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V, 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
- Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-VFBGA
- Supplier Device Package: 9-BGA (1.35x1.35)
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