EPC2206
EPC
EPC
GANFET N-CH 80V 90A DIE
$6.41
Available to order
Reference Price (USD)
500+
$3.65200
1,000+
$3.08000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the EPC2206 by EPC, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The EPC2206 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose EPC.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 13mA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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