TK16A60W,S4VX
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 15.8A TO220SIS
$3.11
Available to order
Reference Price (USD)
1+
$3.11000
500+
$3.0789
1000+
$3.0478
1500+
$3.0167
2000+
$2.9856
2500+
$2.9545
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK16A60W,S4VX by Toshiba Semiconductor and Storage is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Toshiba Semiconductor and Storage for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Taiwan Semiconductor Corporation
TSM060N03PQ33 RGG
onsemi
FDS5680
Vishay Siliconix
IRF740ASTRRPBF
Rohm Semiconductor
RQ3E180AJTB
Diodes Incorporated
ZXMN10A07FTA
onsemi
FDMC6675BZ
Diotec Semiconductor
DI050N06D1
Rohm Semiconductor
RCJ050N25TL
Diodes Incorporated
DMN90H8D5HCT
Vishay Siliconix