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RQ3E180AJTB

Rohm Semiconductor
RQ3E180AJTB Preview
Rohm Semiconductor
MOSFET N-CH 30V 18A/30A 8HSMT
$1.21
Available to order
Reference Price (USD)
3,000+
$0.40530
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 11mA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN

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