ZXMN10A07FTA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 700MA SOT23-3
$0.48
Available to order
Reference Price (USD)
1+
$0.48000
500+
$0.4752
1000+
$0.4704
1500+
$0.4656
2000+
$0.4608
2500+
$0.456
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the ZXMN10A07FTA by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the ZXMN10A07FTA is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
FDMC6675BZ
Diotec Semiconductor
DI050N06D1
Rohm Semiconductor
RCJ050N25TL
Diodes Incorporated
DMN90H8D5HCT
Vishay Siliconix
SI7880ADP-T1-E3
Infineon Technologies
SPA11N65C3XKSA1
Renesas Electronics America Inc
RJK0654DPB-00#J5
Infineon Technologies
IPB090N06N3GATMA1
onsemi
NTHL020N120SC1
IXYS