F3L200R07W2S5FB11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE LOW POWER EASY
$107.24
Available to order
Reference Price (USD)
1+
$107.24000
500+
$106.1676
1000+
$105.0952
1500+
$104.0228
2000+
$102.9504
2500+
$101.878
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The F3L200R07W2S5FB11BOMA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the F3L200R07W2S5FB11BOMA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the F3L200R07W2S5FB11BOMA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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