FZ1800R45HL4S7BPSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE
$4,988.88
Available to order
Reference Price (USD)
1+
$4988.88000
500+
$4938.9912
1000+
$4889.1024
1500+
$4839.2136
2000+
$4789.3248
2500+
$4739.436
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FZ1800R45HL4S7BPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FZ1800R45HL4S7BPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 4500 V
- Current - Collector (Ic) (Max): 1.8 kA
- Power - Max: 4 MW
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 25V, 1800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 297 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB190
Related Products
Infineon Technologies
F475R07W1H3B11ABOMA1
Infineon Technologies
IFS100B12N3E4B31BOSA1
Infineon Technologies
FF300R12KT3HOSA1
Infineon Technologies
FF600R17ME4B11BOSA1
Infineon Technologies
FS225R17KE4BOSA1
Infineon Technologies
FF600R12ME4EB11BOSA1
Infineon Technologies
FP100R12N3T7B11BPSA1
Infineon Technologies
FZ1600R12HP4HOSA2
Microchip Technology
APTGT150TL60G
Infineon Technologies