FD450R12KE4PHOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 450A AG62MM-1
$229.04
Available to order
Reference Price (USD)
1+
$229.04000
500+
$226.7496
1000+
$224.4592
1500+
$222.1688
2000+
$219.8784
2500+
$217.588
Exquisite packaging
Discount
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Infineon Technologies's FD450R12KE4PHOSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FD450R12KE4PHOSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MM-1
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