F423MR12W1M1B11BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY
$217.80
Available to order
Reference Price (USD)
1+
$217.80000
500+
$215.622
1000+
$213.444
1500+
$211.266
2000+
$209.088
2500+
$206.91
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The F423MR12W1M1B11BOMA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the F423MR12W1M1B11BOMA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 0.2 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 3.68 nF @ 800 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1BM-2
Related Products
Fairchild Semiconductor
FMG1G150US60L
Infineon Technologies
FP50R07N2E4B11BOSA1
Infineon Technologies
FS200R12KT4RB11BOSA1
Infineon Technologies
FF1500R17IP5PBPSA1
Infineon Technologies
FS75R12KE3BOSA1
Infineon Technologies
FF400R12KE3B2HOSA1
Infineon Technologies
FF600R12ME4AB11BOSA1
Infineon Technologies
F3L150R12W2H3B11BPSA1
Infineon Technologies
FF200R12KE3HOSA1
Microchip Technology