FF600R12ME4AB11BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 3350W
$391.16
Available to order
Reference Price (USD)
6+
$289.06000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FF600R12ME4AB11BOSA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the FF600R12ME4AB11BOSA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the FF600R12ME4AB11BOSA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Power - Max: 3350 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
F3L150R12W2H3B11BPSA1
Infineon Technologies
FF200R12KE3HOSA1
Microchip Technology
APT47GA60JD40
Infineon Technologies
F3L15MR12W2M1B69BOMA1
Microchip Technology
APT100GT120JR
Infineon Technologies
FS380R12A6T4BBPSA1
Microchip Technology
APT40GL120JU2
Infineon Technologies
DF80R07W1H5FPB11BPSA1
IXYS
IXGN82N120B3H1
Infineon Technologies