APT100GT120JR
Microchip Technology
Microchip Technology
IGBT MOD 1200V 123A 570W ISOTOP
$51.62
Available to order
Reference Price (USD)
11+
$43.06000
Exquisite packaging
Discount
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Engineered for excellence, the APT100GT120JR IGBT module by Microchip Technology sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The APT100GT120JR finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Microchip Technology continues to lead the IGBT module revolution with innovations like the APT100GT120JR.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 123 A
- Power - Max: 570 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: ISOTOP®
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