F3L15R12W2H3B27BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 20A 145W
$51.28
Available to order
Reference Price (USD)
15+
$55.36000
Exquisite packaging
Discount
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Engineered for excellence, the F3L15R12W2H3B27BOMA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The F3L15R12W2H3B27BOMA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the F3L15R12W2H3B27BOMA1.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: 3 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 20 A
- Power - Max: 145 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 875 pF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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