FP100R12W3T7B11BPSA1
Infineon Technologies

Infineon Technologies
LOW POWER EASY
$186.64
Available to order
Reference Price (USD)
1+
$186.64000
500+
$184.7736
1000+
$182.9072
1500+
$181.0408
2000+
$179.1744
2500+
$177.308
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the power of Infineon Technologies's FP100R12W3T7B11BPSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FP100R12W3T7B11BPSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FP100R12W3T7B11BPSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY3B