FD600R06ME3S2BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 600V 600A 2250W
$265.54
Available to order
Reference Price (USD)
10+
$155.49400
Exquisite packaging
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Engineered for excellence, the FD600R06ME3S2BOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FD600R06ME3S2BOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FD600R06ME3S2BOSA1.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 600 A
- Power - Max: 2250 W
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
- Current - Collector Cutoff (Max): 400 nA
- Input Capacitance (Cies) @ Vce: 60 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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