FF600R12IP4VBOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 600A 3350W
$437.04
Available to order
Reference Price (USD)
3+
$444.68333
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the FF600R12IP4VBOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FF600R12IP4VBOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FF600R12IP4VBOSA1.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 600 A
- Power - Max: 3350 W
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Fairchild Semiconductor
FMG1G400US60H
Infineon Technologies
FP100R12KT4PBPSA1
Microchip Technology
APTGT50H60RT3G
Microchip Technology
APTGL240TL120G
Infineon Technologies
F3L300R12ME4B23BOSA1
Infineon Technologies
FF1000R17IE4PBOSA1
Infineon Technologies
FF300R12KE3HOSA1
STMicroelectronics
A1P50S65M2
Infineon Technologies
BYM300A120DN2HOSA1
Infineon Technologies