A1P50S65M2
STMicroelectronics
STMicroelectronics
IGBT MOD 650V 50A 208W ACEPACK1
$50.28
Available to order
Reference Price (USD)
1+
$37.64000
18+
$34.71000
108+
$29.64000
Exquisite packaging
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The A1P50S65M2 from STMicroelectronics is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the A1P50S65M2 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose STMicroelectronics's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 208 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ACEPACK™ 1
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