APTGL475U120DAG
Microchip Technology

Microchip Technology
IGBT MODULE 1200V 610A 2307W SP6
$249.14
Available to order
Reference Price (USD)
100+
$129.16190
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Microchip Technology's APTGL475U120DAG IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The APTGL475U120DAG offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the APTGL475U120DAG in your next-generation HVDC systems or particle accelerator power supplies. Microchip Technology delivers reliability where it matters most with the APTGL475U120DAG IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 610 A
- Power - Max: 2307 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 400A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 24.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6