APT150GT120JR
Microchip Technology
Microchip Technology
IGBT MOD 1200V 170A 830W ISOTOP
$63.30
Available to order
Reference Price (USD)
1+
$53.78000
10+
$50.29100
25+
$46.51200
100+
$43.60500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APT150GT120JR from Microchip Technology is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the APT150GT120JR is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Microchip Technology's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 170 A
- Power - Max: 830 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
- Current - Collector Cutoff (Max): 150 µA
- Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ISOTOP
- Supplier Device Package: ISOTOP®
Related Products
Infineon Technologies
FZ1000R33HE3BPSA1
Microchip Technology
APTCV60HM45RCT3G
Infineon Technologies
FP50R12KE3BOSA1
Infineon Technologies
FZ3600R12HP4HOSA2
Infineon Technologies
FF450R12ME4BOSA1
Fairchild Semiconductor
FMG2G200US60
Infineon Technologies
FZ1600R17KE3B2NOSA1
Infineon Technologies
FZ1500R33HL3BPSA1
Infineon Technologies
FS50R12KT4B15BOSA1
Infineon Technologies