FZ1600R17KE3B2NOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 1600A
$842.92
Available to order
Reference Price (USD)
1+
$842.92000
500+
$834.4908
1000+
$826.0616
1500+
$817.6324
2000+
$809.2032
2500+
$800.774
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FZ1600R17KE3B2NOSA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the FZ1600R17KE3B2NOSA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the FZ1600R17KE3B2NOSA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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