FZ600R12KP4HOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 600A
$192.08
Available to order
Reference Price (USD)
10+
$116.64600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's FZ600R12KP4HOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FZ600R12KP4HOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FZ600R12KP4HOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FZ600R12KP4HOSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 600 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 42 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FP15R12W1T7PB3BPSA1
Infineon Technologies
FP75R12KT4B11BOSA1
onsemi
NXH35C120L2C2ESG
Infineon Technologies
FP40R12KT3GBOSA1
Infineon Technologies
FF300R12KS4HOSA1
Infineon Technologies
FZ400R12KS4PHOSA1
Infineon Technologies
FS200R07PE4BOSA1
Microchip Technology
APTGT50X60T3G
Infineon Technologies
F4100R17N3E4BPSA1
Infineon Technologies