NXH35C120L2C2ESG
onsemi
onsemi
IGBT MODULE, CIB 1200 V, 35 A IG
$83.29
Available to order
Reference Price (USD)
1+
$83.29167
500+
$82.4587533
1000+
$81.6258366
1500+
$80.7929199
2000+
$79.9600032
2500+
$79.1270865
Exquisite packaging
Discount
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onsemi's NXH35C120L2C2ESG sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the NXH35C120L2C2ESG in your traction inverters or high-energy physics experiments for unparalleled performance. Trust onsemi to deliver cutting-edge IGBT solutions with the NXH35C120L2C2ESG power module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 8.333 nF @ 20 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
- Supplier Device Package: 26-DIP
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