FS75R12W2T7B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 75A
$75.48
Available to order
Reference Price (USD)
1+
$75.48000
500+
$74.7252
1000+
$73.9704
1500+
$73.2156
2000+
$72.4608
2500+
$71.706
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the FS75R12W2T7B11BOMA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FS75R12W2T7B11BOMA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FS75R12W2T7B11BOMA1.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 65 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A (Typ)
- Current - Collector Cutoff (Max): 13 µA
- Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FF225R65T3E3BPSA1
Infineon Technologies
FF450R12ME4EB11BPSA1
Infineon Technologies
F3L200R07PE4BOSA1
Infineon Technologies
FZ600R12KP4HOSA1
Infineon Technologies
FP15R12W1T7PB3BPSA1
Infineon Technologies
FP75R12KT4B11BOSA1
onsemi
NXH35C120L2C2ESG
Infineon Technologies
FP40R12KT3GBOSA1
Infineon Technologies
FF300R12KS4HOSA1
Infineon Technologies