FMG2G200US60
Fairchild Semiconductor
Fairchild Semiconductor
IGBT, 200A, 600V, N-CHANNEL
$30.65
Available to order
Reference Price (USD)
1+
$30.65000
500+
$30.3435
1000+
$30.037
1500+
$29.7305
2000+
$29.424
2500+
$29.1175
Exquisite packaging
Discount
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Experience next-generation power control with Fairchild Semiconductor's FMG2G200US60 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FMG2G200US60 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FMG2G200US60 in your next-generation HVDC systems or particle accelerator power supplies. Fairchild Semiconductor delivers reliability where it matters most with the FMG2G200US60 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 695 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 7PM-HA
- Supplier Device Package: 7PM-HA
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