FS660R08A6P2FLBBPSA1
Infineon Technologies
Infineon Technologies
HYBRID PACK DRIVE
$636.00
Available to order
Reference Price (USD)
1+
$636.00000
500+
$629.64
1000+
$623.28
1500+
$616.92
2000+
$610.56
2500+
$604.2
Exquisite packaging
Discount
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Infineon Technologies's FS660R08A6P2FLBBPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FS660R08A6P2FLBBPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 750 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: 1053 W
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBRIDD-1
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