FP15R12W1T4B3BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 28A 130W
$41.29
Available to order
Reference Price (USD)
24+
$35.03375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FP15R12W1T4B3BOMA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the FP15R12W1T4B3BOMA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 28 A
- Power - Max: 130 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microchip Technology
APTGT100DU170TG
Infineon Technologies
F3L15R12W2H3B27BOMA1
Infineon Technologies
FP100R12W3T7B11BPSA1
Infineon Technologies
FF300R17ME4B11BOSA1
Infineon Technologies
FS660R08A6P2FLBBPSA1
Infineon Technologies
FZ1600R17HP4B21BOSA2
Infineon Technologies
FS50R07N2E4
Infineon Technologies
FD600R17KE3B2NOSA1
Microchip Technology
APT35GT120JU3
Infineon Technologies