FCH023N65S3L4
onsemi
onsemi
MOSFET N-CH 650V 75A TO247
$15.08
Available to order
Reference Price (USD)
1+
$13.67000
10+
$12.42400
450+
$9.62831
900+
$8.57230
Exquisite packaging
Discount
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The FCH023N65S3L4 from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's FCH023N65S3L4 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 7160 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 595W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-4
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