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FCP850N80Z

onsemi
FCP850N80Z Preview
onsemi
MOSFET N-CH 800V 8A TO220-3
$1.66
Available to order
Reference Price (USD)
800+
$0.99534
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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