FCX591QTA
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
$0.21
Available to order
Reference Price (USD)
1+
$0.20975
500+
$0.2076525
1000+
$0.205555
1500+
$0.2034575
2000+
$0.20136
2500+
$0.1992625
Exquisite packaging
Discount
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Experience unmatched performance with the FCX591QTA Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the FCX591QTA delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Diodes Incorporated for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 150MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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