FD1000R33HE3KB60BPSA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K AG-IHVB19
$3,148.08
Available to order
Reference Price (USD)
1+
$3148.08000
500+
$3116.5992
1000+
$3085.1184
1500+
$3053.6376
2000+
$3022.1568
2500+
$2990.676
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's FD1000R33HE3KB60BPSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FD1000R33HE3KB60BPSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FD1000R33HE3KB60BPSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FD1000R33HE3KB60BPSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Dual Brake Chopper
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1000 A
- Power - Max: 1.6 MW
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB190-3
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