FS100R12N2T4BDLA1
Infineon Technologies
Infineon Technologies
FS100R12 - IGBT MODULE
$116.48
Available to order
Reference Price (USD)
1+
$116.48000
500+
$115.3152
1000+
$114.1504
1500+
$112.9856
2000+
$111.8208
2500+
$110.656
Exquisite packaging
Discount
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Engineered for excellence, the FS100R12N2T4BDLA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FS100R12N2T4BDLA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FS100R12N2T4BDLA1.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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