FZ1500R33HE3C1NPSA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K
$100,000.00
Available to order
Reference Price (USD)
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$99999.99999
500+
$98999.9999901
1000+
$97999.9999902
1500+
$96999.9999903
2000+
$95999.9999904
2500+
$94999.9999905
Exquisite packaging
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Engineered for excellence, the FZ1500R33HE3C1NPSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FZ1500R33HE3C1NPSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FZ1500R33HE3C1NPSA1.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1500 A
- Power - Max: 2400000 W
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB190-3
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