IM241S6T2BAKMA1
Infineon Technologies
Infineon Technologies
CIPOS MICRO
$8.08
Available to order
Reference Price (USD)
1+
$8.08000
500+
$7.9992
1000+
$7.9184
1500+
$7.8376
2000+
$7.7568
2500+
$7.676
Exquisite packaging
Discount
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Engineered for excellence, the IM241S6T2BAKMA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The IM241S6T2BAKMA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the IM241S6T2BAKMA1.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): -
- Power - Max: 9 W
- Vce(on) (Max) @ Vge, Ic: 1.78V @ 15V, 500mA
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: 23-DIP
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