FF800R12KE7HPSA1
Infineon Technologies
Infineon Technologies
MEDIUM POWER 62MM AG-62MMHB-711
$355.34
Available to order
Reference Price (USD)
1+
$355.34000
500+
$351.7866
1000+
$348.2332
1500+
$344.6798
2000+
$341.1264
2500+
$337.573
Exquisite packaging
Discount
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The FF800R12KE7HPSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FF800R12KE7HPSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FF800R12KE7HPSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 800 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 800A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MM
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