NXH100B120H3Q0PTG
onsemi
onsemi
IGBT MODULE 1200V 50A 186W 22PIM
$76.73
Available to order
Reference Price (USD)
1+
$76.73000
500+
$75.9627
1000+
$75.1954
1500+
$74.4281
2000+
$73.6608
2500+
$72.8935
Exquisite packaging
Discount
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onsemi's NXH100B120H3Q0PTG stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the NXH100B120H3Q0PTG enables higher power density in MRI gradient amplifiers. Choose onsemi for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 186 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM (55x32.5)
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