MDI145-12A3
IXYS
IXYS
IGBT MODULE 1200V 160A 700W Y4M5
$66.18
Available to order
Reference Price (USD)
6+
$59.38167
Exquisite packaging
Discount
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Experience next-generation power control with IXYS's MDI145-12A3 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MDI145-12A3 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MDI145-12A3 in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MDI145-12A3 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 160 A
- Power - Max: 700 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
- Current - Collector Cutoff (Max): 6 mA
- Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M5
- Supplier Device Package: Y4-M5
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