MWI35-12A7
IXYS
IXYS
IGBT MODULE 1200V 62A 280W E2
$86.57
Available to order
Reference Price (USD)
6+
$66.69167
Exquisite packaging
Discount
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Optimize your power systems with IXYS's MWI35-12A7, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The MWI35-12A7 is particularly effective in high-ambient-temperature environments like steel mill drives. IXYS brings decades of semiconductor expertise to every MWI35-12A7 module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 62 A
- Power - Max: 280 W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A
- Current - Collector Cutoff (Max): 2 mA
- Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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