FP10R12W1T4B29BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE VCES 600V 100A
$41.20
Available to order
Reference Price (USD)
24+
$35.97083
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's FP10R12W1T4B29BOMA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FP10R12W1T4B29BOMA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FP10R12W1T4B29BOMA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FP10R12W1T4B29BOMA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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